275,000 $ Price is negotiable
Make an offer| Wafer size | 8 in |
| ------------------- | |
| Length x width x height | 200.0 × 48.0 × 80.0 |
| Weight | 7000 lb |
| worked hours | |
| hours under power | |
| state | as-is, where-is |
| At local norms | yes |
| status | visible but unplugged |
| Last availability date | 08/12/2025 |
The ULVAC Technologies NE950EX ICP RIE is a high-throughput dry etching system designed primarily for compound semiconductor, LED, and MEMS manufacturing applications. This inductively coupled plasma (ICP) and reactive ion etching (RIE) system features magnetic confinement (ISM) technology, which provides a high-density plasma with excellent uniformity and anisotropy, essential for precise etching processes.
This batch-type system supports wafers up to 20.32 cm in diameter and can handle multiple wafer sizes per load: up to 29 wafers of 2-inch, 12 wafers of 3-inch, 7 wafers of 4-inch, or 3 wafers of 6-inch. It is well-suited for etching a variety of materials including GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials, making it versatile for thin-film and optical device applications.
Key features include a proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition, backside helium cooling, and a temperature-controlled cathode for effective wafer thermal management. The system also incorporates automated cassette-to-carrier wafer loading to streamline processing.
The machine is equipped with a gas box and trans box, multiple cables and tubes indicating complex internal systems, and pneumatic or hydraulic actuators on the central processing chamber. The wafer buffer stations, labeled Buffer1 and Buffer2, include transparent protective covers and metallic wafer holders with multiple round slots. The control interface features a touchscreen panel displaying power controls, various operational indicators (e.g., IG Filament, vacuum pressure), and software version information (Ver.1.05.01).
The equipment measures approximately 5080 mm in length, 1219.2 mm in width, and 2032 mm in height, with a weight of 3176 kg. Photographs show the system to be clean and well-maintained with no visible damage. This makes the ULVAC NE950EX ICP RIE a reliable choice for high-volume semiconductor and LED manufacturing requiring precision etching and high throughput.
The following description has been generated using artificial intelligence based on the product information available. It is provided for guidance only and may not reflect all specifications or conditions. Please contact us if you need precise or confirmed details.
ULVAC NE-950EX ICP / RIE Etch System. (High-Throughput Dry Etcher for Compound Semiconductors / LED / MEMS).
Manufacturer: ULVAC. Model: NE-950EX
System Type: Inductively Coupled Plasma (ICP) / Reactive Ion Etching (RIE) with magnetic confinement (ISM) — delivers high-density plasma with excellent uniformity and anisotropy. Throughput / Wafer Handling: Batch-type system supporting up to
29 wafers (2″), 12 wafers (3″), 7 wafers (4″), or 3 wafers (6″) per load.
Supported Materials / Applications: Designed for compound-semiconductor and LED manufacturing. Compatible with etching of GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials. Also suitable for MEMS, optical devices, and other thin-film / etch applications.
High-density ICP with magnetic confinement (ISM) and proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition.
Backside helium cooling and temperature-controlled cathode for wafer thermal management; automated cassette-to-carrier wafer load.
Flexible gas chemistry supporting process gases such as BCl₃, Cl₂, SiCl₄, CF₄, SF₆, C₄F₈, O₂, Ar, enabling both F- and Cl-based etches for metals, semiconductors, dielectrics, etc.
Use Cases: Ideal for high-volume LED manufacturing, compound-semiconductor device fabrication, MEMS, optical device structuring, sapphire or hard-material etching where high plasma density, uniformity, and throughput matter.
Contact us with any questions, or to schedule an inspection or to make shipping arrangements. More images available upon request.
Please note that this description may have been translated automatically. Contact us for further information. The information of this classified ad are only indicative. We recommend to check the details with the seller before a purchase
| Client type | Machinery dealer |
| Active since | 2009 |
| Offers online | 4 |
| Last activity | April 7, 2026 |
ULVAC NE-950EX ICP / RIE Etch System. (High-Throughput Dry Etcher for Compound Semiconductors / LED / MEMS).
Manufacturer: ULVAC. Model: NE-950EX
System Type: Inductively Coupled Plasma (ICP) / Reactive Ion Etching (RIE) with magnetic confinement (ISM) — delivers high-density plasma with excellent uniformity and anisotropy. Throughput / Wafer Handling: Batch-type system supporting up to
29 wafers (2″), 12 wafers (3″), 7 wafers (4″), or 3 wafers (6″) per load.
Supported Materials / Applications: Designed for compound-semiconductor and LED manufacturing. Compatible with etching of GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials. Also suitable for MEMS, optical devices, and other thin-film / etch applications.
High-density ICP with magnetic confinement (ISM) and proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition.
Backside helium cooling and temperature-controlled cathode for wafer thermal management; automated cassette-to-carrier wafer load.
Flexible gas chemistry supporting process gases such as BCl₃, Cl₂, SiCl₄, CF₄, SF₆, C₄F₈, O₂, Ar, enabling both F- and Cl-based etches for metals, semiconductors, dielectrics, etc.
Use Cases: Ideal for high-volume LED manufacturing, compound-semiconductor device fabrication, MEMS, optical device structuring, sapphire or hard-material etching where high plasma density, uniformity, and throughput matter.
Contact us with any questions, or to schedule an inspection or to make shipping arrangements. More images available upon request.
Please note that this description may have been translated automatically. Contact us for further information. The information of this classified ad are only indicative. We recommend to check the details with the seller before a purchase
| Wafer size | 8 in |
| ------------------- | |
| Length x width x height | 200.0 × 48.0 × 80.0 |
| Weight | 7000 lb |
| worked hours | |
| hours under power | |
| state | as-is, where-is |
| At local norms | yes |
| status | visible but unplugged |
| Last availability date | 08/12/2025 |
The ULVAC Technologies NE950EX ICP RIE is a high-throughput dry etching system designed primarily for compound semiconductor, LED, and MEMS manufacturing applications. This inductively coupled plasma (ICP) and reactive ion etching (RIE) system features magnetic confinement (ISM) technology, which provides a high-density plasma with excellent uniformity and anisotropy, essential for precise etching processes.
This batch-type system supports wafers up to 20.32 cm in diameter and can handle multiple wafer sizes per load: up to 29 wafers of 2-inch, 12 wafers of 3-inch, 7 wafers of 4-inch, or 3 wafers of 6-inch. It is well-suited for etching a variety of materials including GaN/AlGaN, sapphire, metals, ITO, SiC, AlN, ZnO, and other III-V or hard materials, making it versatile for thin-film and optical device applications.
Key features include a proprietary “Star” electrode for uniform plasma distribution and reduced re-deposition, backside helium cooling, and a temperature-controlled cathode for effective wafer thermal management. The system also incorporates automated cassette-to-carrier wafer loading to streamline processing.
The machine is equipped with a gas box and trans box, multiple cables and tubes indicating complex internal systems, and pneumatic or hydraulic actuators on the central processing chamber. The wafer buffer stations, labeled Buffer1 and Buffer2, include transparent protective covers and metallic wafer holders with multiple round slots. The control interface features a touchscreen panel displaying power controls, various operational indicators (e.g., IG Filament, vacuum pressure), and software version information (Ver.1.05.01).
The equipment measures approximately 5080 mm in length, 1219.2 mm in width, and 2032 mm in height, with a weight of 3176 kg. Photographs show the system to be clean and well-maintained with no visible damage. This makes the ULVAC NE950EX ICP RIE a reliable choice for high-volume semiconductor and LED manufacturing requiring precision etching and high throughput.
The following description has been generated using artificial intelligence based on the product information available. It is provided for guidance only and may not reflect all specifications or conditions. Please contact us if you need precise or confirmed details.
| Client type | Machinery dealer |
| Active since | 2009 |
| Offers online | 4 |
| Last activity | April 7, 2026 |
Машина за вафли Ulvac Technologies NE950EX ICP RIE
Waferovací stroj Ulvac Technologies NE950EX ICP RIE
Ulvac Technologies NE950EX ICP RIE Wafer maskine
Ulvac Technologies NE950EX ICP RIE Waferanlage
Μηχανή γκοφρέτας Ulvac Technologies NE950EX ICP RIE
ULvac Technologies NE950EX ICP Etch System
Máquina para wafer Ulvac Technologies NE950EX ICP RIE
Machine pour wafer Ulvac Technologies NE950EX ICP RIE
Stroj za oblatne Ulvac Technologies NE950EX ICP RIE
Ulvac Technologies NE950EX ICP RIE Ostya gép
Macchina per wafer Ulvac Technologies NE950EX ICP RIE
Vaflių mašina Ulvac Technologies NE950EX ICP RIE
Ulvac Technologies NE950EX ICP RIE Wafelmachine
Maszyna do produkcji płytek półprzewodnikowych Ulvac Technologies NE950EX ICP RIE
Máquina de wafer Ulvac Technologies NE950EX ICP RIE
Aparat pentru napolitane Ulvac Technologies NE950EX ICP RIE
Ulvac Technologies NE950EX ICP RIE Пластина
Mašina za vafle Ulvac Technologies NE950EX ICP RIE
Ulvac Technologies NE950EX ICP RIE Wafer maskin
Wafer Makinası Ulvac Technologies NE950EX ICP RIE
English (EU)
English (GB)